silicon epitaxial dual npn transistors semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9009 issue 1 page 1 of 3 2N3904DCSM dual silicon planar npn transistors. hermetic ceramic surface mount package. designed for general purpose and switching applicati ons. screening options available. absolute maximum ratings (t a = 25c unless otherwise stated) each side total device v cbo collector ? base voltage 60v v ceo collector ? emitter voltage 40v v ebo emitter ? base voltage 6v i c continuous collector current 200ma p d total power dissipation at t a = 25c 500mw 600mw (1) derate above 25c 2.86mw/c 3.43mw/c t j junction temperature range -55 to +200c t stg storage temperature range -55 to +200c thermal properties (each side) symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 350 c/w notes notes notes notes (1) total device power dissipation limited by package.
silicon epitaxial dual npn transistors 2N3904DCSM semelab lim semelab lim semelab lim semelab limited itedited ited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9009 issue 1 page 2 of 3 electrical characteristics (each side, t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units i cbo collector-cut-off current v cb = 30v i e = 0 30 i ebo emitter cut-off current v eb = 3v i c = 0 30 na v (br)cbo collector-base breakdown voltage i c = 10a 60 v (br)ceo (2) collector-emitter breakdown voltage i c = 1.0ma 40 v (br)ebo emitter-base breakdown voltage i e = 10a 6 v i c = 0.1ma 40 i c = 1.0ma 70 i c = 10ma 100 300 i c = 50ma 60 h fe (2) forward-current transfer ratio i c = 100ma v ce = 1.0v 30 i c = 10ma i b = 1.0ma 0.65 0.85 v be(sat) (2) base-emitter saturation voltage i c = 50ma i b = 5ma 0.95 i c = 10ma i b = 1.0ma 0.2 v ce(sat) (2) collector-emitter saturation voltage i c = 50ma i b = 5ma 0.3 i b = 500ma 1.45 v be(f) (2) forward base-emitter voltage i b = 200ma t a = 100c 2 v dynamic characteristics i c = 10ma v ce = 20v f t transition frequency f = 100mhz 300 mhz i c = 1.0ma v ce = 10v h fe small-signal current gain f = 1.0khz 100 400 v cb = 5v i e = 0 c obo output capacitance f = 1.0mhz 4 v eb = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 8 pf i c = 100 a v ce = 5v r s = 1.0k nf (3) noise figure f = 10hz to 15.7khz 5 db t d delay time v cc = 3v v be = 0.5v 35 t r rise time i c = 10ma i b1 = 1.0ma 35 t s storage time v cc = 3v i c = 10ma 200 t f fall time i b1 = i b2 = 1.0ma 50 ns notes notes notes notes (2) pulse width 300us, 2% (3) by design only, not a production test.
silicon epitaxial dual npn transistors 2N3904DCSM semelab lim semelab lim semelab lim semelab limited itedited ited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9009 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) lcc2 (mo - 041bb) underside view pad 1 ? collector 1 pad 4 ? collector 2 pad 2 ? base 1 pad 5 ? emitter 2 pad 3 ? base 2 pad 6 ? emitter 1 1 2 6 3 4 5 2.54 0.13 (0.10 0.005) 0.64 0.06 (0.025 0.003) 0.23 (0.009) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 2.29 0.20 (0.09 0.008) rad. a 1.27 0.13 (0.05 0.005) a = 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005)
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